Views: 0 Author: Site Editor Publish Time: 2023-06-29 Origin: Site
With the gradual recovery of the Global macro environment, the third generation Semiconductor industry, such as SiC/GaN, will reach a new development peak in 2023, and continue to stir up a pool of high voltage and high power applications such as new energy vehicles, photovoltaic energy storage, industrial power supplies, communication base stations, etc.
On this occasion, TrendForce Jibang Consulting successfully held the "2023 Jibang Consulting Third Generation Semiconductor Frontier Trend Seminar" in JW Marriott Hotels, Futian, Shenzhen on June 15, bringing together representatives of the third generation semiconductor advanced enterprises at home and abroad, as well as many elites in scientific research institutions and the media, to discuss the current situation of the third generation Semiconductor industry and look forward to the future. The venue was fully booked, and the enthusiasm of the attendees was high, reflecting the prosperous scene of the third-generation semiconductor industry.
At the beginning of the meeting, Ms. Fan Xiaoli, General Manager of Jibang Consulting, delivered a speech. She expressed sincere welcome and heartfelt thanks to all the guests and online audience, and expressed her best wishes for the development of the third generation Semiconductor industry. Subsequently, industry experts in the third-generation semiconductor field and Jibang Consulting analysts delivered exciting speeches one after another：
Peking University
The third-generation semiconductors represented by GaN and SiC have many irreplaceable and excellent properties, with a wide range of applications. They are one of the key areas of national major demand and international high-tech industry competition, and are currently in a critical window of industrialization. Therefore, they have received high attention from the academic community, industry, central and local governments, and even the financial investment community.
The third-generation semiconductor materials and devices have rich application scenarios in the fields of optoelectronics, radio frequency electronics, and power electronics, and they are irreplaceable.
China has established a relatively complete R&D and industrial system in the above three fields, and the scale of the semiconductor lighting industry has ranked first in the world. However, overall, there is still a gap of 3-5 years between the third-generation semiconductor technology and the international top level.
Fortunately, the third generation Semiconductor industry in China has made substantial breakthroughs in both R&D and industry. Among them, scientific research institutions have the ability to develop a full innovation chain, and the third generation semiconductor industry chain has also been basically formed, with a relatively complete layout. Moreover, the cooperation between research institutions and enterprises has become closer, and it is expected to accelerate the transformation of research and development achievements in the future.
Peking University has achieved significant results in the field of GaN based third-generation semiconductors for many years and is beginning to achieve industrial applications. In recent years, significant achievements have been made in the epitaxial growth of GaN materials on Si substrates and the development of power electronic devices both domestically and internationally, and efforts are being made to promote industrial applications.
Huacan Optoelectronics
Driven by mobile phones and computers, the GaN fast charging market has shown tremendous marketing capabilities, especially with 65W-100W as the mainstream. In 2023, with the active investment of more manufacturers, GaN's market attention further increased, driving the verification and use of 3C power supplies, data centers, electric vehicles, photovoltaic energy storage and other related manufacturers.
However, GaN is currently in its early stages of development and still faces technical issues such as homogeneous substrate growth and poor reliability, which limit production yield and commercial development. Among them, the characteristics of GaN devices are determined by the epitaxial structure, and the reliability of devices is closely related to the material quality. At present, GaN substrates are still under development, and there is no mature GaN substrate in the market. Heterojunction substrates such as silicon and sapphire can only be used, which leads to poor GaN device characteristics.
Since entering the GaN power electronics field in 2020, Huacan Optoelectronics has actively carried out technical research and product development based on its accumulation in LED chips in the GaN materials and devices field. In terms of its own epitaxy, Huacan Optoelectronics launched the research and development of 6-inch sapphire substrates in 2022, and initially completed the epitaxial wafer development and chip fabrication of 650V GaN-on-Si for D-mode&E-mode. In terms of devices, small batch sampling and testing of 650V GaN products were completed, as well as 650V GaN HEMT and demo board sampling.
According to the plan, Huacan Optoelectronics' GaN products will gradually develop from 650V to 900V, and then to 1200V, and low-voltage products will be planned to expand the product line.
InnoSeco
Power semiconductors are the core support of energy electronics. With the upgrading of terminal application requirements, power semiconductor technology continues to iterate, and more advanced materials are gradually emerging. After years of technological accumulation and market validation, GaN's advantages in performance, cost, supply, application ecology, and reliability have begun to emerge. It can be said that the era of GaN has arrived.
In recent years, GaN has begun to shift from the low power consumer electronics market to the high power data center, Solar inverter, automobile, communication power supply and other markets. These applications put forward higher requirements for power density, energy efficiency, switching frequency, thermal management, reliability and size. GaN has the advantages of wide band gap, high frequency, low loss, and strong radiation resistance, which just meets the requirements of various application scenarios for high efficiency, low energy consumption High cost performance requirements.
Facing the promising power application market and increasingly fierce market competition, the competitiveness of GaN manufacturers in product performance and capacity supply is particularly crucial. As one of the few GaN IDM companies in the world with a complete industrial chain, InnoSecco has unique advantages in core technology innovation, stable production capacity supply, and cost of scale. It has achieved groundbreaking results in consumer electronics, photovoltaic energy storage, automobiles, data centers, and other fields. At present, InnoGaN power devices from InnoSecco have covered the full voltage range of high and low voltage, and the shipment volume of GaN chips has exceeded 170 million.
Nashe Intelligence
Epitaxial growth is the core link in the manufacturing of silicon carbide devices, and its epitaxial quality and defect rate directly affect the performance and yield of the device. The production cost of silicon carbide epitaxy accounts for approximately 23% of the total cost of silicon carbide devices. Therefore, epitaxial equipment and its preparation technology play a crucial role.
At present, the preparation method of silicon carbide epitaxial layer mainly relies on chemical vapor deposition (CVD). Among them, CVD method has the advantages of precise control of epitaxial film thickness and doping concentration, fewer defects, moderate growth rate, and automatic process control. It is currently a successfully commercialized silicon carbide epitaxial technology.
At present, the era of local industrialization of silicon carbide has arrived, and the rapid development of downstream applications has greatly driven the development of the industry. Among them, Nashe Intelligent has developed China's first fully independently innovative silicon carbide epitaxial CVD equipment, which has the advantages of high process adjustability, low consumables cost, and low maintenance frequency, helping to promote the localization development of key silicon carbide equipment. Since the first device left the factory in 2021, Nashe Intelligent has signed sales contracts with more than 10 customers and has received over 150 orders.
Guoxing Optoelectronics
SIP (system level packaging) technology is a Integrated circuit packaging technology that integrates multiple bare chips and passive components into a single package. In the post Moore era, SIP technology can help chip products increase integration, reduce size and reduce power consumption. Its application market covers consumer electronics, wireless electronics, automotive electronics, medical electronics, cloud computing and industrial control.
The essence of GaN is a switch transistor, and achieving specific functions cannot be achieved without controlling the GaN switch transistor. The control behavior belongs to the logic part of the circuit, and sealing the logic circuit and power circuit is a very difficult challenge. The GaN solution based on SIP packaging can assist in further upgrading LED driver power in terms of performance and cost.
Facing the downstream of LED applications, GaN is setting off a new wave in the field of LED driver power supply. In this context, Guoxing Optoelectronics aims to create a GaN switching device with specific functions to help simplify the switching circuit.
At present, the company has developed multiple SIP based GaN-IC products and corresponding GaN driver solutions, which can be applied in fields such as LED lighting driver power supply, LED display driver power supply, wall socket fast charging, and mobile plug fast charging. Relying on a mature and strong research and development team, the company's GaN products will go further on the path of SIP packaging in the future, promoting the upgrading of the LED driver power industry.
