Views: 0 Author: Site Editor Publish Time: 2023-08-31 Origin: Site
Tyco Tianrun
Power semiconductor devices are the core components that make up power electronic conversion devices. Among them, MOSFETs have gradually become the mainstream product of power devices due to their easy driving, fast switching speed, and low losses.
Compared to traditional silicon power semiconductors, SiC MOSFETs have three most significant characteristics: large bandgap width, high critical breakdown field strength, and high thermal conductivity, which help improve system efficiency, reduce losses, and costs in high-voltage and high-power applications.
Photovoltaics, energy storage, and Charging station are abundant and operate in a harsh environment, making them a racetrack for SiC devices. However, SiC MOSFETs have started at the industrial level, but still need to follow the development path of silicon devices.
At present, the maturity of SiC MOSFETs is still not high, and SiC MOSFETs that meet the requirements of application scenarios need to be measured and tested from multiple dimensions. Among them, reliability is the admission ticket, and it also needs to have characteristics such as stability and consistency, ease of use, usability, and price friendliness. In addition, the factors behind it, such as materials, equipment, processes, production efficiency, operation and maintenance costs, material costs, testing and evaluation, and product definition, all need to be considered.
Overall, the development of individual SiC MOSFET products and even the entire SiC industry should be viewed rationally. At present, there is still a significant gap between domestic SiC MOSFETs and international leading levels in terms of characteristics, consistency, reliability, and application verification. However, with a stable and prepared attitude, keeping up with international development without falling behind is considered a victory, ultimately jointly promoting the large-scale industrialization of the SiC industry.
Gallium Future
In recent years, on the basis of the rapid development of the PD fast charging industry, the third-generation semiconductor GaN has gradually expanded to application fields such as communication, automotive, industrial, data center power supply, photovoltaic energy storage, etc., helping to improve system conversion efficiency and power density, reduce energy consumption, and empower dual carbon construction under a green earth.
Among them, outdoor power supply, as a portable energy storage product, is widely used in leisure and entertainment, outdoor work, and emergency rescue, and will meet broad market demand under the trend of energy conservation.
In outdoor power supply, two-way inverter is the core device, and GaN has prominent advantages in working frequency and conversion efficiency, which has become an ideal choice for two-way inverter differentiated competition. It not only meets the application requirements of outdoor operation for waterproof and dustproof, meets the market's design requirements for fanless outdoor power supply, but also helps to extend the service life and reliability of outdoor power supply, improve the charging efficiency, and thus improve the overall user experience.
Faced with the application opportunities of outdoor power sources, Gallium Future has been vigorously expanding the application of GaN in bidirectional inverters since 2021, focusing on outdoor power application scenarios. It has also taken the lead in launching a 4kW GaN high-power fanless bidirectional inverter technology platform, with advanced parameters and indicators, and has become the preferred choice for high-power applications such as outdoor power sources. At present, Gallium's future GaN series products have covered different categories of applications such as consumer, industrial, and automotive regulations.
MITSUBISHI
There is a broad demand for low loss devices in application scenarios such as home appliances, industrial new energy, traction power, and automobiles. SiC is gradually penetrating these application markets due to its excellent characteristics of high voltage resistance, high temperature resistance, high frequency, and low loss. However, the SiC industry is still in its early stages of development and faces many technical challenges.
For example, in the application level of SiC power modules, special attention needs to be paid to issues such as fast switching speed, electrical characteristics drift, and low short-circuit tolerance. Mitsubishi Electric has developed corresponding solutions to these problems and the requirements for SiC devices and modules in household appliances, industry, rail traction and other fields.
Mitsubishi Electric has invested in the research and development of SiC technology since 1994. In recent years, it has continued to promote the SiC power module market. In 2010, it launched the world's first air conditioning SiC power module, and later became the first supplier of all SiC power modules for Shinkansen high-speed railway in 2015. At present, Mitsubishi Electric has developed the third generation low voltage SiC MOSFET (MIT2-MOSTM), which can achieve high reliability of the gate oxide layer by using the multi ion tilt injection technology based on the trench gate structure.
In addition, the use of SBD-Embedded SiC MOSFET technology has further improved the long-term reliability of high-voltage SiC modules, and a 3.3kV SiC module FMF800DC-66BEW using this technology has been launched.
At present, SiC power modules developed by Mitsubishi Electric with different packaging technologies have been commercialized in the fields of variable frequency air conditioning, medical equipment, energy storage system and rail traction.
Tianyu Semiconductor
With the characteristics of wide bandgap, high breakdown electric field strength, high electron saturation drift rate, high melting point, and high thermal conductivity, the penetration rate of SiC in new energy vehicles, photovoltaic energy storage, industry, and rail transit is gradually increasing. In the future, the market size of SiC devices will further expand with the development of relevant application markets.
The SiC industry chain is mainly divided into substrate preparation, epitaxial growth, device manufacturing, module testing, and system application. Among them, epitaxy, as an important link connecting the preceding and following, has a critical impact on the reliability of devices, and therefore, epitaxial equipment also plays an important role. CVD chemical vapor deposition method is currently the mainstream SiC epitaxial preparation method, which is divided into three growth systems: vertical, horizontal, and planetary. It largely determines the wavelength uniformity and defect density level of the epitaxial wafer, ultimately affecting the yield and cost of the device.
Tianyu Semiconductor is the earliest enterprise in China to achieve the industrialization of SiC epitaxial wafers. It currently has three operating bases and has achieved a global layout. It is one of the few enterprises in China's SiC field that have international competitiveness. At present, Tianyu Semiconductor is continuously expanding its production line and increasing research and development investment, with the goal of continuously optimizing epitaxial processes, improving the quality of SiC epitaxial layers, and developing large-sized and thick SiC epitaxial wafers.
Jibang Consulting
Driven by downstream application markets such as automobiles and industries, the compound semiconductor market has shifted towards SiC/GaN power components.
With the clarification of cooperation projects between Infineon, ON Semi, and other automotive and energy industries, the overall SiC power component market size will reach 2.28 billion US dollars by 2023, and is expected to reach 5.33 billion US dollars by 2026.
At present, the SiC power component market is still dominated by international IDM manufacturers, who are actively investing in 8-inch production lines. At the same time, in order to welcome the outbreak of downstream markets, the global SiC substrate production capacity is also rapidly increasing. For the key automotive market, the 800V automotive system is accelerating its penetration into BEV, which is very conducive to the further development of the automotive SiC market.
The main driving force of the GaN power component market comes from consumer electronics, especially fast chargers. At the same time, many manufacturers have already turned their attention to industrial and automotive markets such as data centers and renewable energy, which contain huge penetration opportunities and are the key application directions for future GaN power components.
