Views: 0 Author: Site Editor Publish Time: 2023-11-09 Origin: Site
1.Supported by material characteristics, the competitive advantage of automotive GaN components will become increasingly significant.
With excellent material properties, SiC components are accelerating their introduction into fields such as automobiles, renewable energy, and power supply PFC, while GaN components are also shining brightly in the field of rapid charging of terminal devices; In addition, in the fields of automobiles and network communication, the visibility of GaN components is also increasing.
SiC components have become the mainstream solution to replace Si components in traction inverters and on-board chargers used in electric vehicles. At the same time, the application demand for SiC components in on-board DC/DC converters continues to rise. In terms of GaN components, supported by material characteristics, there is still room for them to play in car chargers; In addition, the competitive advantage of GaN components in power electronic components, optical radar sensors, wireless communication modules, and audio systems installed in cars will become increasingly significant. It is estimated that by 2025, the market share of GaN component applications will reach 21% in the new energy vehicle field, with a growth rate of about 9% compared to 2023.
2.The localization policy of semiconductors is expected to give China's domestic supply chain an advantage
Given that China is the world's largest automotive market and local automakers are also very active in introducing innovative technologies and applications, it is expected that the Chinese market will be the main driving force in demand for automotive GaN components. On the other hand, in the absence of easing trade frictions, the localization of semiconductors has become the primary policy for China to break through the technological blockade and continue the momentum of technological development. The third generation semiconductors are also actively planned by the government and enterprises, which makes the GaN component supply chain in China more worthy of attention.
At present, the main domestic GaN substrate and epitaxial suppliers include China Gallium Semiconductor and Suzhou Navier; Manufacturers specializing in GaN crystal include Zhongboxin, Jingzhan Semiconductor, Juneng Crystal Source, and Baishi Electronics; And IDM factories include San'an Optoelectronics, Silan Microelectronics, Runxin Microelectronics, Nenghua Microelectronics, InnoSecco, Saimicroelectronics, etc. With the increasing demand for GaN components in Chinese vehicles, these manufacturers may be able to seize the opportunity.
